期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 3, 页码 341-344出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2968735
关键词
p-GaN gate HEMT; reverse conduction; power transistor; distributed built-in SBD
资金
- Hong Kong Research Impact Fund [R6008-18]
A 700-V normally-off p-GaN gate power transistor with distributed built-in Schottky barrier diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately arrayed along the device width and are locally isolated using ion implantations. The built-in SBD provides a low reverse turn-on voltage which is independent of the threshold voltage and gate bias of the transistor. Compared to the two-device scheme consisting of an anti-parallel p-GaN gate HEMT/SBD pair, the proposed transistor exploits the common access region in both forward conduction and reverse conduction, thus a significant reduction in chip area is obtained.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据