期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 3, 页码 393-396出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2964270
关键词
Self-aligned coplanar structure; In-Ga; Zn-O thin-film transistor; organic inter-layer dielectric
资金
- Korea Evaluation Institute of Industrial Technology through the Korean Government [10079974]
- Kyung Hee University-Samsung Electronics Research and Development Program entitled Flexible Flash Memory Device Technologies for Next-Gen Consumer Electronics
A new doping technique to form the conductive source/drain regions of self-aligned coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of the IGZO film was reduced to 3.8 x 10(-4) Omega.cm after simply coating the organic inter-layer dielectric thin film. The carrier mobility at the saturation region and subthreshold swing of the fabricated IGZO TFTs were 18.4 cm2/Vs and of 150 mV/dec, respectively. The channel width-normalized contact resistance was estimated to be as low as 12 Omega.cm, verifying the ohmic behaviors. Robust device stabilities were also confirmed under bias-stress and temperature-stress conditions.
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