期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 3, 页码 405-408出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2970434
关键词
Amorphous InGaZnO; ZnO nanowires; field emitter arrays; thin-film transistors; multiprobe technique
资金
- National Key Research and Development Program of China [2016YFA0202001]
- National Natural Science Foundation of China [91833303, 61922090]
- Science and Technology Department of Guangdong Province
- Fundamental Research Funds for the Central Universities
- Guangzhou Science Technology and Innovation Commission
High-voltage thin-film transistors (HV-TFTs) based on amorphous InGaZnO (a-IGZO) are demonstrated to work in the range of kilo-voltage (kV). The devices feature a high breakdown voltage of over 1.1 kV, on-current of 10.8 $\mu \text{A}$ , and an on/off current ratio over 10(5). By integrating kV-TFTs with ZnO nanowires, actively controlled field emitters are obtained that exhibit extremely small current fluctuation in the emission current (2.4 % for 3600s). The operating mechanisms of the HV-TFTs are investigated by in-situ measurement of channel potentials and simple equations are derived to describe the current-voltage relations. This study demonstrates the feasibility of using a-IGZO in HV-TFTs that drive large-area field-emitter arrays and provide general understanding and design rules for HV-TFTs designed to drive nanowire field emitters.
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