期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 3, 页码 313-316出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2967782
关键词
Nanosheet; gate-all-around; mobility; quantum; centroid; mobility degradation; compact model
资金
- Berkeley Device Modeling Center
- Department of Science and Technology, Government of India
We propose an updated compact model for mobility in Nanosheet FETs. This is necessary since Nanosheet FETs exhibit significant mobility degradation with thickness and width scaling caused by centroid shift, changing effective mass due to quantum confinement as well as various crystal orientations of the various conduction planes. The model takes all of these effects into account. It has been implemented in Verilog-A and validated with experimental data. To the best of our knowledge, this is the first compact model capturing the effect of nanosheet scaling on mobility.
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