期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 3, 页码 317-320出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2968093
关键词
Carrier number fluctuations; flicker noise; gate-all-around; silicon device; input-referred voltage power spectral density; low-frequency-noise; n-channel; oxide trap density; power spectral density
资金
- CAPES
- Logic IIAP Program
This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.
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