期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 12, 页码 1909-1912出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2946393
关键词
Curing; degradation; floating-body; gate-all-around (GAA); gate-induced drain leakage (GIDL); hot-carrier injection (HCI); MOSFET; recovery; reliability
资金
- Global Frontier Project [CISS-2011-0031848]
- National Research Foundation (NRF) of Republic of Korea [2017H1A2A1042274, 2018R1A2A3075302, 2019M3F3A1A03079603]
- IC Design Education Center
Gate oxide aging in a gate-all-around (GAA) FET fabricated on a bulk substrate was successfully cured by gate-induced drain leakage (GIDL) current. High level of GIDL current flows during the off-state cures the gate oxide aging by hot-carrier injection (HCI). The recovery behaviors were analyzed by tracing changes in the device parameters. Especially, it was found that the curing was not associated with the electric field or created holes under the bias conditions for GIDL, but was associated with the elevated temperature. The GIDL recovery requires neither extra apparatus for Joule heating nor circuit modification. This work can be useful for various FETs which have high off- state current.
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