期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 1, 页码 131-134出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2956016
关键词
Ga2O3 SBD; thermal oxidation; breakdown voltage; peak electric field
资金
- National Natural Science Foundation of China [61674130, 61604137]
- Key Research Program of Frontier Science of Chinese Academy of Sciences [QYZDB-SSW-JSC048]
In this letter, a high-performance ((2) over bar 01) beta-Ga2O3 vertical Schottky Barrier Diode (SBD) with a thermally oxidized termination is reported. A novel edge termination at the Schottky contact edge is formed by using thermal oxidation treatment, which reduces the electron concentration and effectively suppresses the peak electric field. By using a thermal oxidation termination, the breakdown voltage (V-br) of beta-Ga2O3 SBD increases from 380 V to 940 V, and the specific on-resistance (R-on,R- sp) just increases from 2.9 m Omega.cm(2) to 3.0 m Omega.cm(2). Our device demonstrates a power figure of merit (V-br(2)/R-on,R- sp) as high as 295 MW/cm(2). These results indicate that the thermally oxidized termination shows a new way to improve the breakdown characteristics of beta-Ga2O3 SBD.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据