期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 2, 页码 276-279出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2963379
关键词
Band tail; cryogenic; MOSFET; modeling; subthreshold slope; subthreshold swing
资金
- European Union's Horizon 2020 Research and Innovation Programme MOS-Quito (MOS-based Quantum Information Technology) [688539]
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the characteristic decay of a band tail. The proposed expression tends to the Boltzmann limit when the decay of the band tail tends to zero. Since the saturation is universally observed in different types of MOSFETs (regardless of dimension or semiconductor material), this suggests that an intrinsic mechanism is responsible for the band tail.
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