期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 2, 页码 296-299出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2962657
关键词
Ga2O3; enhancement mode; power device; vertical MOSFET; ion implantation; current aperture
资金
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Nextgeneration power electronics (New Energy and Industrial Technology Development Organization)
Enhancement-mode (E-mode) vertical beta-Ga2O3 metal-oxide-semiconductor (MOS) field-effect transistors featuring a current aperture were developed on a single-crystal beta-Ga2O3 (001) substrate. Nitrogen ions were implanted into a drift layer grown by halide vapor phase epitaxy to form current blocking layers (CBLs) for vertical source-drain isolation, while Si ionswere implanted to form degenerately doped source contact regions and a top-gated lateral channel that was fully depleted at 0-V gate bias. The devices delivered a high output current on/off ratio of 2x10(7) despite a nonideal MOS interface that limited the maximum drain current density to <0.1 kA/cm(2). Pulsed operation without current collapse under off-state voltage stress was demonstrated. Hard breakdown occurred prematurely owing to leakage through the CBLs, but is expected to improve with an optimized nitrogen implantation process. The realization of E-mode vertical Ga2O3 transistors based on a manufacturable all-ion-implanted process represents an important step toward practical applications of Ga2O3 power electronics.
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