期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 2, 页码 208-211出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2958623
关键词
Leaky integrate-and-fire (LIF) neuron; neuromorphic computing system; neuron inhibition; single transistor latch (STL); SOI MOSFET; spiking neural network (SNN)
资金
- National Research Foundation (NRF), South Korea [2017H1A2A1042274, 2018R1A2A3075302, 2019M3F3A1A03079603]
- IC Design Education Center (EDA Tool and MPW)
- National Research Foundation of Korea [2017H1A2A1042274] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
For the first time, a leaky integrate-and-fire (LIF) neuron with both excitatory and inhibitory characteristics is demonstrated using a single MOSFET. No additional circuits such as comparator, reset circuit, or current-to-voltage converter as well as a membrane capacitor are needed, and thus the LIF neuron is realized with a footprint of 6 F-2. Because of its gate terminal, neuron firing is selectively inhibited, which can improve the energy efficiency of the neuromorphic system by inducing sparse activity. Furthermore, the spiking property of the neuron can be controlled by the gate, which can provide additional room to enhance the classification accuracy.
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