Numerical simulation for optimization of an ultra-thin n-type WS2/p-type c-Si heterojunction solar cells

Recently, ultra-thin tungsten disulfide (WS2) has become one of the hot spots in the research of solar cell materials due to its excellent optical and electrical properties. In this study, we use AFORS-HET software version 2.5 at air mass 1.5 to simulate the structure of n-type WS2/p-type c-Si heterojunction solar cells. Our goal is to find an appropriate way to improve the performance of n-type WS2/p-type c-Si heterojunction solar cells by simulation. Through optimizing the parameters of both WS2 layer and Si layer, we obtain a maximum photovoltaic conversion efficiency of 20.57%. Subsequently, we investigate the influence of the ITO work function and the interface states on the performance of n-type WS2/p-type c-Si heterojunction solar cells. It's found that through selecting the suitable ITO work function and decreasing the interface defect density, solar cell's performance can be further improved. Our result indicates that ultra-thin WS2 is a promising photovoltaic material for the application in solar cells.