期刊
CHEMISTRY-A EUROPEAN JOURNAL
卷 26, 期 42, 页码 9126-9156出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.202000090
关键词
flexible electronics; low-temperature processing; semiconductors; solution processing; thin films
资金
- National Research Foundation of Korea (NRF) - Korean Government (MSIP) [NRF-2019R1A2C2002447]
- NRF - MSIP [NRF-2019M3F3A1A02071601]
- Competency Development Program for Industry Specialist of the Korean Ministry of Trade, Industry and Energy (MOTIE) [P0002397]
For the fabrication of next-generation flexible metal oxide devices, solution-based methods are considered as a promising approach because of their potential advantages, such as high-throughput, large-area scalability, low-cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low-temperature, solution-processed, flexible, metal oxide semiconductor devices, from a single thin-film transistor device to fully integrated circuits and systems. The main challenges of solution-processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy-harvesting devices for self-powered systems that integrate displays, sensors, data-storage units, and information processing functions.
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