期刊
CHEMICAL REVIEWS
卷 120, 期 12, 页码 5745-5794出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemrev.9b00518
关键词
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资金
- EPSRC [EP/K018388/1, EP/L015315/1, EP/M508305/1]
- Element Six, Ltd.
- Royal Academy of Engineering
- EPSRC [EP/M508305/1, EP/K018388/1] Funding Source: UKRI
Nitrogen is ubiquitous in both natural and laboratory-grown diamond, but the number and nature of the nitrogen-containing defects can have a profound effect on the diamond material and its properties. An ever-growing fraction of the supply of diamond appearing on the world market is now lab-grown. Here, we survey recent progress in two complementary diamond synthesis methods-high pressure high temperature (HPHT) growth and chemical vapor deposition (CVD), how each is allowing ever more precise control of nitrogen incorporation in the resulting diamond, and how the diamond produced by either method can be further processed (e.g., by implantation or annealing) to achieve a particular outcome or property. The burgeoning availability of diamond samples grown under well-defined conditions has also enabled huge advances in the characterization and understanding of nitrogen-containing defects in diamond-alone and in association with vacancies, hydrogen, and transition metal atoms. Among these, the negatively charged nitrogen-vacancy (NV-) defect in diamond is attracting particular current interest in account of the many new and exciting opportunities it offers for, for example, quantum technologies, nanoscale magnetometry, and biosensing.
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