4.6 Article

Facile synthesis of ZnS quantum dots at room temperature for ultra-violet photodetector applications

期刊

CHEMICAL PHYSICS LETTERS
卷 742, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.cplett.2020.137127

关键词

Semiconductor Quantum dots (QDs); Zinc sulfide (ZnS); Optical property photodetector

资金

  1. National Natural Science Foundation of China [61106098]
  2. Equipment Pre-research Fund under the Equipment Development Department (EDD) of China's Central Military Commission (CMC) [1422030209]
  3. Innovation Team Program of NORINCO Group [2017CX024]
  4. Yunnan Key Laboratory of Advanced Photoelectric Materials Devices [2019DG014]

向作者/读者索取更多资源

Zinc sulfide (ZnS) quantum dots (QDs) were synthesized using a facile, low-cost and environmentally friendly method at room temperature and ambient pressure. The structural, optical and electrical properties of the asprepared ZnS QDs were investigated. The monodispersed crystalline ZnS QDs with an average size of 3.8 nm has been prepared, an absorption peak at 292 nm in the ultra-violet (UV) range was observed. The maximum responsivity (R) and detectivity (D*) of the ZnS QDs based photodetector under 365 nm UV light illumination were 5.8 A W-1 and 1.97 x 10(13) Jones, respectively, which shows important potential application in UV detection.

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