期刊
CHEMICAL PHYSICS
卷 529, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.chemphys.2019.110574
关键词
Silicon carbide; Graphene; Electromagnetic wave absorption; Chemical vapor deposition
资金
- Scientific Research Fund of Sanqin Scholars [BJ11-26]
- Natural Science Fund of Shaanxi University of Science and Technology [2018BJ-59]
Silicon carbide nanowires (SiC NWs) covered by vertically oriented graphene (SiC@graphene) is prepared by a chemical vapor deposition method. As a microwave absorber, SiC@graphene exhibits a minimum reflection loss (RL) of -16.2 dB at the thickness of 2.5 mm with an absorption bandwidth of 2.64 GHz (RL < -10 dB, 9.5-12.14 GHz), superior than that of the bare SiC NWs. The improved absorption performance is mainly originated from the complex conductive network and the numerous interfaces formed by the vertically grown graphene on the SiC NWs, which are beneficial for multiple scattering and absorptions of the incident microwave.
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