4.7 Article

Nitrogen defect structure and NO plus intermediate promoted photocatalytic NO removal on H-2 treated g-C3N4

期刊

CHEMICAL ENGINEERING JOURNAL
卷 379, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2019.122282

关键词

Carbon nitride; Nitrogen defects; Photocatalysis; NO removal; Reaction mechanism

资金

  1. National Natural Science Foundation of China [21822601, 21777011, 21501016]
  2. Plan for National Youth Talents of the Organization Department of the Central Committee

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By heating g-C3N4 powder in the hydrogen atmosphere, nitrogen defects were introduced into the framework of g-C3N4 where the nitrogen atoms in g-C3N4 were reacted and partially removed with hydrogen. The effects of nitrogen defects on the electronic structure, optical properties, generation of reactive oxygen species and photocatalytic NO oxidation of g-C3N4 were investigated by combining experimental characterization and DFT theoretical calculations. The N defect is located at N-2C sites and can be tuned by the H-2 treating temperature. The obtained N defective g-C3N4 products possessed narrower bandgap adjusted by surface N defects and were able to promote the separation of photoexcited charge carries and produce reactive oxygen species more efficiently than pristine g-C3N4. The NO+ reaction intermediate was formed on the N defects sites and enabled an accelerated photocatalytic reaction that contributed to enhanced photocatalytic NO removal. The NO removal ratio on N defects g-C3N4 obtained at 600 degrees C (CH-H-600) was 2.6 times that of pristine g-C3N4 under visible light irradiation. The present work could provide new insights into the understanding of the role of N-defects in g-C3N4 and application of photocatalytic technology for efficient air purification.

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