期刊
CERAMICS INTERNATIONAL
卷 46, 期 8, 页码 10115-10120出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.01.001
关键词
MgO; Thermal ALD; Plasma enhanced ALD; Leakage current; Conduction mechanism
资金
- Samsung Electronics Inc.
- MOTIE (Ministry of Trade, Industry Energy) [20003555]
- KSRC (Korea Semiconductor Research Consortium) support program
- Korea Evaluation Institute of Industrial Technology (KEIT) [20003555] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The continuous device scaling of dynamic random access memories has been increasing demands for the development of dielectric materials with high dielectric constants and low leakage currents. In this study, we developed MgO thin films through atomic layer deposition (ALD) using bis(ethylcyclopentadienyl)magnesium combined with two different reactants, H2O or O-2 plasma, and compared the physical and chemical characteristics of MgO thin films produced by thermal ALD (Th-ALD) and plasma-enhanced ALD (PEALD). The films were deposited in a temperature range of 200-400 degrees C, and self-limited surface reactions were observed for both ALD processes. Th-ALD MgO films showed the oxygen deficient composition, while more stoichiometric MgO films were achieved by PEALD process. To evaluate the electrical characteristics of the MgO films, the meta-1-insulator-metal capacitors were fabricated. The electrical characteristics of the MgO film, such as the dielectric constant and leakage current, were compared according to the reactant type. The bulk-limited leakage current conduction mechanisms of the Th-ALD and PEALD MgO thin films were also investigated.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据