期刊
CERAMICS INTERNATIONAL
卷 46, 期 8, 页码 12470-12479出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.02.009
关键词
3C-SiC; Nanoindentation; Plasticity; Amorphization; Molecular dynamics simulation
资金
- National Natural Science Foundation of China (NSFC)-German Research Foundation (DFG) international joint research programme [51761135106]
- Heavy-duty Intelligent Manufacturing Equipment Innovation Center of Hebei Province
- Fundamental Research Funds for the Central Universities
- Science Challenge Project [TZ2018006-0201-02, TZ2018006-0205-02]
Amorphization plays an important role in ceramic deformation under mechanical loading. In the present work, we investigate the elasto-plastic deformation mechanisms of monocrystalline cubic silicon carbide (3C-SiC) in spherical nanoindentation by means of molecular dynamics simulations. The indentation-induced amorphization and its interactions with other deformation modes are emphasized. Initially, the suitable empirical potential capable of accurately characterizing the mechanical and defect properties of monocrystalline 3C-SiC, as well as the propensity of phase transformation from 3C-SiC to amorphous SiC, is rationally selected by benchmarking of different empirical potentials with experimental data and density functional theory calculations. Subsequently, the inhomogeneous elastic-plastic transitions during nanoindentation of monocrystalline 3C-SiC, as well as their dependence on crystallographic orientation, are investigated. Phase transformations including amorphization are analyzed using combined methods based on radial distribution function and bond angle distribution. Our simulation results demonstrate that before plasticity initiation-related pop-in event, each indented-mono-crystalline 3C-SiC experiences a pure quasi-elastic deformation governed by the formation of amorphous structures. And this process of amorphization is fully reversible for small indentation depths. Further amorphization and dislocation nucleation jointly dominate the incipient plasticity in 3C-SiC nanoindentation. It is found that the indentation-induced defect zone composed of amorphous phase and dislocations is more pronounced in 3C-SiC(010) than that in the other two orientations of (110) and (111).
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