期刊
CERAMICS INTERNATIONAL
卷 46, 期 8, 页码 10603-10609出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.01.064
关键词
In and Ga dopants; ZnO; Transparent conducting oxides
资金
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea government Ministry of Trade, Industry and Energy [20184030202070]
- Competency Development Program for Industry Specialists of the Korean Ministry of Trade, Industry and Energy (MOTIE) [P0002397]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20184030202070] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20152013024] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The effect of Ga dopant on ZnO thin films was studied for transparent conducing oxide (TCO) applications. In and Ga were selected as dopants for the ZnO thin films, and their mole ratios were varied to identify the optimum proportions of the two dopants. After doping, optical post-annealing processes were applied to improve the conducing properties of the films. By applying optical post-annealing processes, rapid thermal annealing and CO2 laser annealing, the dopants were ionized and thus contributed to the conducing process. The crystal and electrical properties were studied and analyzed. By determining the films' absorption and transmittance properties, their energy band gaps were calculated, and through X-ray photoelectron spectroscopy analysis, we found that the Ga dopant plays an important role in the TCO behavior. The Ga dopant in the ZnO thin films that had undergone laser annealing improved the electrical conductance properties due to their contributing the oxygen vacancy concentration, increasing the amount of free electrons in the ZnO structure.
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