Orientation transition, dielectric, and ferroelectric behaviors of sol-gel derived PZT thin films deposited on Ti-Pt alloy layers: A Ti content-dependent study

Lead zirconate titanate (PZT) films have been deposited on Ti-Pt/Ti/SiO2/Si(100) alloy substrates by sol-gel process. The purpose of the present study was to examine the Ti content in the Ti-N alloy layers-dependent preferred orientation and electrical behaviors of PZT films. X-ray diffraction (XRD) shows that Ti-N alloy electrodes induces texture transition from (100) to (111), and the maximum peak of (100) and minimum peak of (111) are obtained in the sample on Ti-N alloy layer with a sputtering power of 12.5 W/150 W. The film deposited on Ti-N alloy layer with a sputtering power of 12.5 W/150 W exhibits a reduced oxygen vacancies concentration, which results in a maximum epsilon of 1224.25, an enhanced 2P(r) of 40.5 mu C/cm(2), and a relative decreased 2E(c) of 108 kV/cm. Therefore, it can be concluded that the Ti-N alloy layers with an appropriate Ti content play a very critical role for the preferred orientation, microstructure, and improved electrical properties of the PZT films.