期刊
APPLIED SURFACE SCIENCE
卷 507, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2019.145003
关键词
Cu2ZnSnS4 (CZTS); Pulsed laser deposition (PLD); Photovoltaic heterojunction; UPS; Work function; Band energy diagram
类别
资金
- NSERC (the Natural Science and Engineering Research Council of Canada)
- FRQNT (Les Fonds de Recherche du Quebec-Nature et Technologies) through its strategic Network Plasma-Quebec
- PPR project of the Ministere de l'Enseignement Superieur, de la Recherche Scientifique et de la Formation des Cadres of Morocco
- Centre National pour la Recherche Scientifique et Technique of Morocco
- H2020 Program under the project INFINITE-CELL [H2020-MSCA-RISE-2017-777968]
- Spanish Ministry of Science, Innovation and Universities under the IGNITE project [ENE2017-87671-C3-1-R]
- Spanish Ministry of Science, Innovation and Universities under WINCOST [ENE2016-80788-C5-1-R]
- European Regional Development Funds (ERDF, FEDER Programa Competitivitat de Catalunya 2007-2013)
We report on the concomitant laser ablation of a Cu2ZnSnS4 target with zinc strips affixed to its surface in order to control at will the Zn content of the CZTS films, and study its effect on their optoelectronic properties in view of their integration into photovoltaic (PV) devices. EDX measurements showed the progressive increase of the Zn content of these pulsed laser deposited (PLD) CZTS films with increasing the surface ratio of Zn-strips to CZTS-target (R-Zn/CZTS). XRD and Raman analyses confirmed that the PLD-CZTS films crystallize in the kesterite phase regardless of the R-Zn/ CZTS ratio. The increase of the Zn content of the PLD-CZTS films was found to increase their optical bandgap from similar to 1.6 to similar to 1.9 eV, while their p-type carrier concentration drops by more than 3 orders of magnitude. The PLD-deposited p-CZTS films were directly deposited onto n-silicon to form Al/n-Si/p-CZTS/ITO heterojunction PV devices, of which PCE was found to be dependent on the R-Zn/CZTS ratio. Indeed, we have identified an optimal R-Zn/CZTS ratio of 24% that leads to p-CZTS/n-silicon heterojunctions with a maximum PCE of 2.2% (an order of magnitude higher than that of CZTS/Si solar cells without any Zn addition). Interestingly, this highest PCE was obtained with the PLD-CZTS films exhibiting the highest work function of 4.75 eV, as measured by UPS. The reconstruction of the band energy diagram showed that the highest PCE achieved at the optimal RZn/ CZTS ratio of 24% corresponds to the largest built-in voltage of the p-CZTS/n-silicon heterojunction.
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