期刊
APPLIED SURFACE SCIENCE
卷 501, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2019.144253
关键词
Silicon; Fullerenes; 2D compounds; Atomic structure; Electronic structure; Transport measurements
类别
资金
- Russian Foundation for Basic Researches [17-02-00577]
- Council on grants of the President of the Russian Federation [MK-4472.2018.2]
So-called metal-induced silicon reconstructions (i.e., metal films of monolayer or submonolayer thickness epitaxially grown on single-crystal silicon substrates in ultra-high vacuum) represent a specific class of low-dimensional advanced materials with potential prospects for electronic and spintronic applications. However, they are highly vulnerable to air and, thus, require protective capping. Finding a suitable material is a challenging task, since, in general, the metal-induced reconstructions are vulnerable also to overgrowth of solid layers. In the present study, we have found that C-60 fullerite film shows up as a proper capping layer for the (Tl, Au)/Si (111)root 7x root 7 compound reconstruction. Due to a perfect non-distractive epitaxial C-60 overgrowth, the metallic Tl-Au compound preserves at the deeply buried interface its atomic structure and all basic electronic properties, including spin-splitting of surface-state bands and conductivity of metallic type with a weak antilocalization effect.
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