期刊
APPLIED PHYSICS LETTERS
卷 116, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5143547
关键词
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资金
- Major State Basic Research Development Program [2016YFA0203900, 2016YFB0400801, 2015CB921600]
- Key Research Project of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSWJSC016, QYZDY-SSW-JSC042]
- Natural Science Foundation of China [61521001, 61574151, 61574152, 61674158, 61722408, 61734003, 61835012]
Recently, a large amount of effort has been devoted to bringing p- and n-type two-dimensional (2D) materials in close contact to promise a p-n junction for photodetectors and photovoltaic devices. However, all solar cells based on 2D materials are single p-n junctions so far, where the open circuit voltage is usually limited by the bandgap of semiconductor materials. Here, by using a scanning-probe domain patterning method to polarize the ferroelectric film, we demonstrate a series connected MoTe2 photovoltaic cell with an additive open circuit voltage and output electrical power. The nonvolatile MoTe2 p-n diodes exhibit a rectification ratio of 100. As a photodetector, the device presents a responsivity of 220mA/W and an external quantum efficiency of 41% without any gate or bias voltages. The open circuit voltage increases linearly with the number of series connected p-n junctions and can be beyond the bandgap of the multilayer MoTe2. Published under license by AIP Publishing.
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