相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Si Joon Kim et al.
JOM (2019)
Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis
Kiyoshi Endo et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300 degrees C low temperature process with plasma-enhanced atomic layer deposition
Takashi Onaya et al.
MICROELECTRONIC ENGINEERING (2019)
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
Olli-Pekka Kilpi et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Single Atomic Layer Ferroelectric on Silicon
Mehmet Dogan et al.
NANO LETTERS (2018)
L-g=30 nm InAs Channel MOSFETs Exhibiting f(max)=410 GHz and f(t)=357 GHz
Jun Wu et al.
IEEE ELECTRON DEVICE LETTERS (2018)
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Elvedin Memisevic et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Optimizing process conditions for improved Hf1 - ZrxO2 ferroelectric capacitor performance
Terence Mittmann et al.
MICROELECTRONIC ENGINEERING (2017)
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2 capacitors due to stress-induced crystallization at low budget
Si Joon Kim et al.
APPLIED PHYSICS LETTERS (2017)
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
Anna Chernikova et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Aein S. Babadi et al.
APPLIED PHYSICS LETTERS (2016)
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
Min Hyuk Park et al.
ADVANCED MATERIALS (2015)
Crystallization of HfO2 in InAs/HfO2 core-shell nanowires
T. Rieger et al.
NANOTECHNOLOGY (2014)
About the deformation of ferroelectric hystereses
T. Schenk et al.
APPLIED PHYSICS REVIEWS (2014)
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
Min Hyuk Park et al.
APPLIED PHYSICS LETTERS (2013)
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Jun Wu et al.
APPLIED PHYSICS LETTERS (2012)
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Mueller et al.
NANO LETTERS (2012)
Ferroelectricity in hafnium oxide thin films
T. S. Boescke et al.
APPLIED PHYSICS LETTERS (2011)
Nanometre-scale electronics with III-V compound semiconductors
Jesus A. del Alamo
NATURE (2011)
New technique for measuring ferroelectric and antiferroelectric hysteresis loops
Mamoru Fukunaga et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2008)
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
Sayeef Salahuddin et al.
NANO LETTERS (2008)
Ferroelectrics go bananas
J. F. Scott
JOURNAL OF PHYSICS-CONDENSED MATTER (2008)
分享论文
