Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Deposition, annealing, and integration of ferroelectric HfxZr1-xO2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 mu C/cm(2) even down to an annealing temperature of 370 degrees C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-kappa/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-kappa/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-kappa/InAs interface. (C) 2020 Author(s).