Structural, dielectric, impedance and modulus spectroscopy of BiLa2TiVO9 ceramic

A standard solid-state ceramic technology (i.e., high-temperature solid-state reaction method) was used to fabricate new bismuth layer Aurivillius compound, BiLa2TiVO9. The formation of a single phase with an orthorhombic structure was confirmed by the X-ray diffraction structural analysis. The tangent loss measured at 200 degrees C is found to be in between 0.03 and 0.05 in the frequency ranging from 1 kHz to 1 MHz. The dielectric constant is found to be around 300 at room temperature. The resistance and reactance parts of complex impedance have been determined by the complex impedance spectroscopy (CIS) techniques. The electric modulus spectroscopy study of the compound confirmed the presence of the short range displacement of charge carriers. Jonscher's power law fitting has been used to verify our experimental data of conductivity spectra. The nature of variation of exponent (n) obtained from the fitting follows the correlated barrier hopping as the predominant conduction mechanism in the sample. Room-temperature polarization loop confirms the ferroelectric nature of the sample.