期刊
ADVANCED MATERIALS
卷 32, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201906874
关键词
artificial vacancies; bridged heterostructures; optoelectronic devices; orbital hybridization; vdW gap
类别
资金
- National Key RAMP
- D Program of China [2018YFA0703700, 2016YFA0200700]
- National Natural Science Foundation of China [61851403, 61625401, 11674072]
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication
- Youth Innovation Promotion Association CAS
Van der Waals (vdW) heterostructures exhibit excellent optoelectronic properties and novel functionalities. However, their applicability is impeded due to the common issue of the tunneling barrier, which arises from the vdW gap; this significantly increases the injection resistance of the photoexcited carriers. Herein, a generic strategy is demonstrated to eliminate the vdW gap in a broad class of heterostructures. It is observed that the vdW gap in the interface is bridged via strong orbital hybridization between the interface dangling bonds of nonlayered chalcogenide semiconductors and the artificially induced vacancies of transition metal chalcogenides (TMDCs). The photoresponse times of bridged PbS/ReS2, PbS/MoSe2, and PbS/MoS2 are approximate to 30, 51, and 43 mu s, respectively. The photon-triggered on/off ratio of the bridged PbS/MoS2, ZnSe/MoS2, and ZnTe/MoS2 heterostructures exceed 10(6), 10(5), and 10(5), respectively. These are several orders of magnitude higher than common vdW heterostructures. The findings obtained in this study present a versatile strategy for overcoming the performance limitations of vdW heterostructures.
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