期刊
ADVANCED MATERIALS
卷 32, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201907903
关键词
ambipolar 2D semiconductors; energy-level phototuning; flexible electronics; multilevel memories; photochromic molecular blends
类别
资金
- European Commission through Graphene Flagship Core 2 project [GA-785219]
- European Commission through Marie Sklodowska-Curie ITN project iSwitch [GA-642196]
- M-ERA.NET project MODIGLIANI
- European Commission through the ERC project SUPRA2DMAT [GA-833707]
- European Commission through the ERC project Light4Function [GA-308117]
- Agence Nationale de la Recherche through the Labex project CSC within the Investissement d'Avenir program [ANR-10-LABX-0026 CSC, ANR-10-120 IDEX-0002-02]
- Agence Nationale de la Recherche through the Labex project NIE within the Investissement d'Avenir program [ANR-10-120 IDEX-0002-02, ANR-11-LABX-0058 NIE]
- International Center for Frontier Research in Chemistry (icFRC)
- German Research Foundation (DFG) [SFB 658, SFB 951]
- Chinese Scholarship Council
The interfacing of 2D materials (2DMs) with photochromic molecules provides an efficient solution to reversibly modulate their outstanding electronic properties and offers a versatile platform for the development of multifunctional field-effect transistors (FETs). Herein, optically switchable multilevel high-mobility FETs based on few-layer ambipolar WSe2 are realized by applying on its surface a suitably designed bicomponent diarylethene (DAE) blend, in which both hole and electron transport can be simultaneously modulated for over 20 cycles. The high output current modulation efficiency (97% for holes and 52% for electrons) ensures 128 distinct current levels, corresponding to a data storage capacity of 7 bit. The device is also implemented on a flexible and transparent poly(ethylene terephthalate) substrate, rendering 2DM/DAE hybrid structures promising candidates for flexible multilevel nonvolatile memories.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据