期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 14, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201909708
关键词
antiferromagnetic moment; exchange bias; exchange springs; Neel vectors; strain engineering
类别
资金
- National Science Foundation of China [51671023, 51871017, 51871018]
- Beijing Natural Science Foundation [2192031]
- Key Science and Technology Projects of Beijing Education Committee [KZ201810011013]
- Foundation of Beijing Key Laboratory of Metallic Materials and Processing for Modern Transportation
Manipulation of the antiferromagnetic moment in antiferromagnets (AFMs) is a crucial issue for developing AFM-based spintronic devices. Lattice strain is an effective strategy to modulate the antiferromagnetic moment and is traditionally based on a direct crystalline tailoring of AFMs. A novel method for strain tuning the antiferromagnetic moment by controlling the exchange spring in the AFM, which is applicable to other conventional AFM materials, is reported. Specifically, a TiNi(Nb) shape memory alloy (SMA) is used as the substrate of Ta/NiFe/FeMn multilayers. By thermally driven inverse martensitic phase transformation in the SMA, a significant strain of 1.3% is transferred into the film, which toggles a noticeable magnetic moment rotation of NiFe by nearly 90 degrees in the film plane, resulting in a consequent twirling of the Neel vector of FeMn due to interfacial exchange interaction. In turn, the antiferromagnetic moment of FeMn is tailorable by tuning the exchange spring. Simultaneously, the exchange bias field is tuned significantly with a maximal variation of 350% due to the twist of the antiferromagnetic moment, which facilitates strain-assisted magnetization reversal for developing a logic memory device. These findings provide an alternative strategy to advance the development of an AFM-based memorizer by temperature-driven strain engineering.
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