期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 15, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201910713
关键词
band-to-band tunneling; BP; InSe heterojunctions; field-effect transistors; negative differential resistance
类别
资金
- National Key R&D Program of China [2017YFA0303400]
- NSFC [61774144]
- Chinese Academy of Sciences [QYZDY-SSW-JSC020, XDPB12, XDB28000000]
- Engineering and Physical Sciences Research Council [EP/M012700/1]
- European Union [785219]
- University of Nottingham
- National Academy of Sciences of Ukraine
- Leverhulme Trust [RF-2017-224]
- EPSRC [EP/M012700/1] Funding Source: UKRI
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 10(8) and negative differential resistance at low applied voltages (V approximate to 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.
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