期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201907951
关键词
2D-3D heterojunctions; high speed; MoTe2; photodiodes; pulsed laser deposition
类别
资金
- National Natural Science Foundation of China [91833303, 51672180, 51622306, 51821002]
- Collaborative Innovation Center of Suzhou Nano Science and Technology (Nano-CIC)
- China Postdoctoral Science Foundation [2016M590499]
- Joint Fund of Ministry of Education for Preresearch of Equipment [6141A02022422]
- Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology [SKL2019KF09]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
2D transition metal dichalcogenides are promising candidates for high-performance photodetectors. However, the relatively low response speed as well as the complex transfer process hinders their wide applications. Herein, for the first time, the fabrication of a few-layer MoTe2/Si 2D-3D vertical heterojunction for high-speed and broadband photodiodes by a pulsed laser deposition technique is reported. Owing to the high junction quality, ultrathin MoTe2 film thickness, and unique vertical n-n heterojunction structure, the photodiode exhibits excellent device performance in terms of a high responsivity of 0.19 A W-1 and a large detectivity of 6.8 x 10(13) Jones. The device is also capable of detecting a broadband light with wavelength spanning from 300 to 1800 nm. More importantly, the device possesses an ultrahigh response speed up to 150 ns with a 3-dB electrical bandwidth approaching 0.12 GHz. This work paves the way toward the fabrication of novel 2D-3D heterojunctions for high-performance, ultrafast photodetectors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据