期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 7, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201908382
关键词
2D metal chalcogenides; Cu9S5; photodetectors; p-n heterojunctions; van der Waals epitaxy
类别
资金
- National Natural Science Foundation of China [21825103, 51727809]
- Hubei Provincial Natural Science Foundation of China [2019CFA002]
- Fundamental Research Funds for the Central University [2019kfyXMBZ018]
- Analytical and Testing Center of Huazhong University of Science and Technology
P-n junctions based on two dimensional (2D) van der Waals (vdW) heterostructure are one of the most promising alternatives in next-generation electronics and optoelectronics. By choosing different 2D transition metal dichalcogenides (TMDCs), the p-n junctions have tailored energy band alignments and exhibit superior performance as photodetectors. The p-n diodes working at reverse bias commonly have high detectivity due to suppressed dark current but suffer from low responsivity resulting from small quantum efficiency. Greater build-in electric field in the depletion layer can improve the quantum efficiency by reducing recombination of charge carriers. Herein, Cu9S5, a novel p-type semiconductor with direct bandgap and high optical absorption coefficient, is synthesized by salt-assisted chemical vapor deposition (CVD) method. The high density of holes in Cu9S5 endows the constructed p-n junction, Cu9S5/MoS2, with strong build-in electric field according to Anderson heterojunction model. Consequently, the Cu9S5/MoS2 p-n heterojunction has low dark current at reverse bias and high photoresponse under illumination due to the efficient charge separation. The Cu9S5/MoS2 photodetector exhibits good photodetectivity of 1.6 x 10(12) Jones and photoresponsivity of 76 A W-1 under illumination. This study demonstrates Cu9S5 as a promising p-type semiconductor for high-performance p-n heterojunction diodes.
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