4.8 Article

Atomically Precise PdSe2 Pentagonal Nanoribbons

期刊

ACS NANO
卷 14, 期 2, 页码 1951-1957

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b08390

关键词

transition metal dichalcogenides; nanoribbons; ballistic transport; scanning tunneling microscopy; first-principles calculations; Raman spectroscopy; FET device

资金

  1. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF441]

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We report atomically precise pentagonal PdSe2 nanoribbons (PNRs) fabricated on a pristine PdSe2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

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