期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 10, 页码 11797-11805出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b18663
关键词
copper oxide; Ni doping; photodetector; responsivity; external quantum efficiency
资金
- National Key Research and Development Program of China [2016YFB0501604, 2018YFB0406500, 2017YFA0303403]
- National Natural Science Foundation of China [61774061, 61504043, 61674057, 61227902, 51872191]
- NSAF Foundation of China [U1830130]
- Projects of Science and Technology Commission of Shanghai Municipality [19ZR1473400, 18JC1412400, 18YF1407200, 15JC1401600]
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
- Fundamental Research Funds for the Central Universities (ECNU)
Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1-xNixO (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 x 10(-7) A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for theCu(0.8)Ni(0.2)O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.
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