期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 10, 页码 11479-11488出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b19418
关键词
silicon photoanode; electroless plating; photoelectrochemical cell; oxygen evolution reaction (OER); solar energy conversion
资金
- Fundamental Research Funds for the Central Universities [DUT19LK16]
- National Basic Research Program of China (973 program) [2014CB239402]
- Natural Science Foundation of China [21120102036, 91233201]
- Swedish Research Council [2017-00935]
- Swedish Energy Agency
- K & A Wallenberg Foundation
N- type silicon is a kind of semiconductor with a narrow band gap that has been reported as an outstanding light-harvesting material for photoelectrochemical (PEC) reactions. Decorating a thin catalyst layer on the n-type silicon surface can provide a direct and effective route toward PEC water oxidation. However, most of catalyst immobilization methods for reported n-type silicon photoanodes have been based on energetically demanding, time-consuming, and high-cost processes. Herein, a high-performance NiFeP alloy (NiFeP)-decorated n-type micro-pyramid silicon array (n-Si) photoanode (NiFeP/n-Si) was prepared by a fast and low-cost electroless deposition method for light-driven water oxidation reaction. The saturated photocurrent density of NiFeP/n-Si can reach up to similar to 40 mA cm(-2) and a photocurrent density of 15.5 mA cm(-2) can be achieved at 1.23 V-RHE under light illumination (100 mW cm(-2), AM1.5 filter), which is one of the most promising silicon-based photoanodes to date. The kinetic studies showed that the NiFeP on the silicon photoanodes could significantly decrease the interfacial charge recombination between the n-type silicon surface and electrolyte.
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