期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 10, 页码 11467-11478出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b18197
关键词
p-type metal oxides; quantum chemical computation; solvothermal synthesis; Ni3+-rich nickel oxide; hole transporting layer; time-resolved photoluminescence; KPFM; charge transport and recombination
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- National Research Council Canada (NRC)
- Future Energy Systems (FES) CFREF center
- CMC Microsystems
- Alberta Innovates
- Canada Foundation for Innovation (CFI)
Leading edge p-i-n type halide perovskite solar cells (PSCs) severely underperform n-i-p PSCs. p-i-n type PSCs that use PEDOT:PSS hole transport layers (HTLs) struggle to generate open-circuit photovoltage values higher than 1 V. NiO HTLs have shown greater promise in achieving high V-oc values albeit inconsistently. In this report, a NiO nanomesh with Ni3+ defect grown by the hydrothermal method was used to obtain PSCs with V-oc values that consistently exceeded 1.10 V (champion V-oc = 1.14 V). A champion device photoconversion efficiency of 17.75% was observed. Density functional theory modeling was used to understand the interfacial properties of the NiO/perovskite interface. The PCE of PSCs constructed using the Ni3+-doped NiO nanomesh HTL was similar to 34% higher than that of conventional compact NiO-based perovskite solar cells. A suite of characterization techniques such as transmission electron microscopy, field emission scanning electron microscopy, intensity-modulated photocurrent spectroscopy, intensity-modulated photovoltage spectroscopy, time-resolved photoluminescence, steady-state photoluminescence, and Kelvin probe force microscopy provided evidence of better film quality, enhanced charge transfer, and suppressed charge recombination in PSCs based on hydrothermally grown NiO nanostructures.
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