期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 6, 页码 7351-7357出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b21671
关键词
two-dimensional materials; molybdenum disulfide; terahertz detection; defect engineering; room temperature
资金
- National Natural Science Foundation of China (NSFC) [51632004, 51772173, 51890863]
- National Key Research and Development Program of China [2016YFB0701002, 2016YFB1102301]
- National Key Research and Development Program of Shandong Province [2017CXGC0414]
- Taishan Scholar Foundation of Shandong Province, China
Two-dimensional (2D) materials have exotic intrinsic electronic band structures and are considered as revolutionary foundations for novel nanodevices. Band engineering of 2D materials may pave a new avenue to overcome numerous challenges in modern technologies, such as room temperature (RT) photodetection of light with photon energy below their band gaps. Here, we reported the pioneering RT MoS2-based photodetection in the terahertz (THz) region via introducing Mo4+ and S2- vacancies for rational band gap engineering. Both the generation and transport of extra carriers, driven by THz electromagnetic radiations, were regulated by the vacancy concentration as well as the resistivity of MoS2 samples. Utilizing the balance between the carrier concentration fluctuation and carrier-scattering probability, a high RT photoresponsivity of 10 mA/W at 2.52 THz was realized in an Mo-vacancy-rich MoS2.19 sample. This work overcomes the challenge in the excessive dark current of RT THz detection and offers a convenient way for further optoelectronic and photonic devices based on band gap-engineered 2D materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据