期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 2, 页码 2854-2861出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b18577
关键词
graphene; molybdenum disulfide; field effect transistor; short channel effect; schottky barrier height
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2018R1A2B2008069]
- R&D program of MOTIE/KEIT [10064078]
- Multi-Ministry Collaborative R&D Program through the National Research Foundation of Korea - KNPA
- MSIT
- MOTIE
- ME
- NFA [2017M3D9A1073539]
- National Research Foundation of Korea [2018K2A9A2A06017491]
- Institute for Basic Science [IBS-R011-D1]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10064078] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2017M3D9A1073539, 2018R1A2B2008069, IBS-R011-D1-2020-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A single-layer MoS2 achieves excellent gate controllability within the nanoscale channel length of a field-effect transistor (FET) owing to an ultra-short screening length. However, multilayer MoS2 (ML-MoS2) is more vulnerable to short channel effects (SCEs) owing to its thickness and long screening length. We eliminated the SCEs in an ML-MoS2 FET (thickness of 4-13 nm) at a channel length of sub-30 nm using a Schottky barrier (SB) variable graphene/ML-MoS2 heterojunction. Although the band modulation in the ML-MoS2 channel worsens with a decrease in the channel length, which is similar to the SCEs occurring in conventional FETs, the variable Fermi level (E-F) of a graphene electrode along the gate voltage allows control of the SB at the graphene/MoS2 junction and backs up the current modulation through a variable SB. Electrical measurements and a theoretical band simulation demonstrate the efficient SB modulation of our graphene nanogap (GrNG) ML-MoS2 FET with three distinct carrier transports along V-gs: a thermionic emission at a low SB, Fowler-Nordheim tunneling at a moderate SB, and direct tunneling at a high SB. Our GrNG FET shows an extremely high on-off current ratio of similar to 10(8), which is approximately three orders of magnitude better than a previously reported metal nanogap (MeNG) FET and a self-aligned metal/graphene nanogap FET with a similar MoS2 thickness. Our GrNG FET also exhibits a 100,000-times higher on-off ratio, 100-times lower subthreshold swing, and 10-times lower drain induced barrier.
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