4.8 Article

Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 2, 页码 2615-2624

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b16898

关键词

oxide semiconductor; thin-film transistor; passivation layer; DDP-polymer; parylene-C

资金

  1. National Research Foundation of Korea (NRF) - Korea government (MSIP) [2017R1A2B3008719]
  2. National Science Foundation (NSF) [ECCS-1542152]
  3. Semiconductor Research Corporation (SRC) [1739795]
  4. Stanford Office of Technology Licensing Stanford Graduate Fellowship fund [KAWBR-6037395]

向作者/读者索取更多资源

In recent decades, oxide thin-film transistors (TFTs) have attracted a great deal of attention as a promising technology in terms of next-generation electronics due to their outstanding electrical performance. However, achieving robust electrical characteristics under various environments is a crucial challenge for successful realization of oxide-based electronic applications. To resolve the limitation, we propose a highly flexible and reliable heterogeneous organic passivation layer composed of stacked parylene-C and diketopyrrolopyrrole-polymer films for improving stability of oxide TFTs under various environments and mechanical stress. The presented multifunctional heterogeneous organic (MHO) passivation leads to high-performance oxide TFTs by: (1) improving their electrical characteristics, (2) protecting them from external reactive molecules, and (3) blocking light exposure to the oxide layer. As a result, oxide TFTs with MHO passivation exhibit outstanding stability in ambient air as well as under light illumination: the threshold voltage shift of the device is almost 0 V under severe negative bias illumination stress condition (white light of 5700 lx, gate voltage of -20 V, and drain voltage of 10.1 V for 20 000 s). Furthermore, since the MHO passivation layer exhibits high mechanical stability at a bending radius of <= 5 mm and can be deposited at room temperature, this technique is expected to be useful in the fabrication of flexible/wearable devices.

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