4.8 Article

Defect-Engineered MoS2 Nanostructures for Reactive Oxygen Species Generation in the Dark: Antipollutant and Antifungal Performances

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 51, 页码 48179-48191

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b12988

关键词

MoS2; nanostructures; defect engineering; ROS in the dark; organic dye removal; antifungal activity

资金

  1. CSIR-India [03(1391)/16/EMR-II]
  2. UGC-SAP, India [530/20/DRS-II/2015 (SAP-I)]
  3. DST-FIST India
  4. SERB, India [ECR/2016/001004]

向作者/读者索取更多资源

Meticulous surface engineering of layered structures toward new functionalities is a demanding challenge to the scientific community. Here, we introduce defects on varied MoS2 surfaces by suitable doping of nitrogen atoms in a sulfur-rich reaction environment, resulting in stable and scalable phase conversion. The experimental characterizations along with the theoretical calculations within the framework of density functional theory establish the impact of nitrogen doping on stabilization of defects and reconstruction of the 2H to IT phase. The as-synthesized MoS2 samples exhibit excellent dye removal capacity in the dark, facilitated by a synergistic effect of reactive oxygen species (ROS) generation and adsorption. Positron annihilation spectroscopy and electron paramagnetic resonance studies substantiate the role of defects and associated sulfur vacancies toward ROS generation in the dark. Further, on the basis of its ample ROS generation in the dark and in the light, the commendable antimicrobial activity of the prepared MoS2 samples against fungal pathogen Alternaria alternata has been demonstrated. Thus, the present study opens up a futuristic avenue to develop newer functional materials through defect engineering by suitable dopants toward superior performances in environment issues.

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