期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 6, 页码 7345-7350出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b21287
关键词
2D materials; transition metal dichalcogenide; atomic layer etching; PdSe2; etching; field effect transistor
资金
- U.S. Department of Energy Office of Science User Facility
- U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Center for Materials Processing at the University of Tennessee
Controlled O-2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch PdSe2 layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that exposure to a remote inductively coupled plasma (ICP) oxygen plasma oxidizes the top layer of the PdSe2 to form PdO2 and SeO2. After an in situ annealing, XPS shows no trace of PdO2 or SeO2, suggesting the byproducts are volatile at low temperature. Atomic force microscopy of PdSe2 exposed to various O-2 + Ar plasmas (O-2 = 25-100%) demonstrates a clear trend between the oxygen concentration and the number of layers etched per cycle. PdSe2 field effect transistors (FETs) were characterized at various stages of two ALE-like cycles, and the electrical properties are correlated to the oxidation and byproduct desorption and layer reduction.
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