期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 12, 页码 13805-13812出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b21115
关键词
g-C3N4; defects engineering; atomic layered g-C3N4; quantum size effect; H-2 evolution
资金
- National Natural Science Foundation of China [51602209]
- Provincial Nature Science Foundation of Sichuan [2017CC0017, 2018FZ0105]
- Fundamental Research Funds - Ministry of Education of the People's Republic of China [2018SCUH0025, YJ201746]
- Fundamental Research Funds for the Central Universities [20826041C4192]
Defect modulation usually has a great influence on the electronic structures and activities of photocatalysts. Here, atomically layered g-C3N4 modified via defect engineering with nitrogen vacancy and cyanogen groups is obtained through two facile steps of thermal treatment (denoted as A-V-g-C3N4). Detailed analysis reveals that the atomic-layered graphitic carbon nitride (2.3 nm) with defect engineering modifying provides more active sites and decreases the electron/hole transferring distances. More importantly, the defects that contain nitrogen vacancies and cyanogen groups extend the responsive wavelength to 650 nm, which effectively suppresses the quantum size effect of atomic-layered g-C3N4. Therefore, the as-obtained A-V-g-C3N4 exhibited a photocatalytic H-2 evolution rate and apparent quantum yield of 3.7 mmol.g(-1).h(-1) and 14.98% (lambda > 420 nm), respectively. This work is expected to provide guidance for the rational design of atomic-layered g-C3N4.
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