期刊
PHYSICAL REVIEW MATERIALS
卷 3, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.3.111001
关键词
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资金
- NSF through the MRSEC program
- NSF MRSEC Program [DMR-1420013]
- C-SPIN, one of the SRC STARnet centers
- SMART, one of seven centers of nCORE, a SRC program - NIST
Two-dimensional MoS2 is an excellent channel material for ultrathin field-effect transistors, but high contact resistance across the deposited metal-MoS2 interface continues to limit its full realization. Using atomic-resolution scanning transmission electron microscopy and first-principles calculations, we showed that deposited metals with a high affinity for sulfur could have a fundamental limitation. Ti-MoS2 contact shows a destruction of the MoS2 layers, a formation of clusters and void pockets, and penetration of Ti into MoS2, resulting in many localized pinning states in the band gap. InAu-MoS2 contact shows that it is possible to achieve a van der Waals-type interface and dramatically reduced pinning states.
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