期刊
PHYSICAL REVIEW MATERIALS
卷 3, 期 10, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.3.103401
关键词
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资金
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) through the Element Strategy Initiative to Form Core Research Center
- PRESTO, Japan Science and Technology Agency [JPMJPR16R1]
- Japan Society for the Promotion of Science (JSPS) [17H01318, 18H01700]
- Support for Tokyotech Advanced Research (STAR)
- Grants-in-Aid for Scientific Research [18H01700] Funding Source: KAKEN
High-critical-temperature (T-c) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and subsequent topotactic chemical reaction using CaH2 powders under evacuated silica-glass ampule atmosphere. Based on this post-deposition thermal annealing treatment that we have developed, a maximum hydrogen concentration x = similar to 0.35 was realized in SmFeAs(O1-xHx). Disordered hydrogen substitution at 0 sites is experimentally confirmed directly by atomic-scale microstructural observations. Magnetization measurement validates the bulk nature of the high-T-c superconductivity in the films. This method will become an effective and general method to fabricate various high-quality oxyhydride epitaxial films.
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