期刊
APL MATERIALS
卷 7, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5129447
关键词
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资金
- World Premier International Research Center Initiative (WPI Initiative on Materials Nanoarchitronics), MEXT
- KAKENHI, JSPS
- Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Satellite, MEXT
- Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University
Ultrathin films with high-k dielectric/ferroelectric properties form the basis of modern electronics. With further miniaturization of electronic devices, conventional materials are expected to experience a challenge because of their critical thickness, where the dielectric/ferroelectric responses are unstable or even disappeared if the film thickness is reduced to the nanometer scale or below a two-dimensional (2D) limit. Owing to the benefit of preparing stable atomically thin film, 2D materials present tantalizing prospects for scaling high-k dielectric/ferroelectric technologies down to the actual atomic scale. Here, we review recent progress in 2D dielectrics/ferroelectrics and related device applications.
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