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Thomas Heisig et al.
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Stefano Ambrogio et al.
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Anna Palau et al.
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Ilia Valov et al.
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Zhongrui Wang et al.
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Biological plausibility and stochasticity in scalable VO2 active memristor neurons
Wei Yi et al.
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Daniele Ielmini et al.
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Hussein Nili et al.
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Manuel Le Gallo et al.
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Yuanyuan Shi et al.
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Can Li et al.
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Zhongrui Wang et al.
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Yachuan Pang et al.
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Multibit memory operation of metal-oxide bi-layer memristors
Spyros Stathopoulos et al.
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Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films
Amit Khare et al.
ADVANCED MATERIALS (2017)
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Sankaramangalam Ulhas Sharath et al.
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David Cooper et al.
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Hongchu Du et al.
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Anja Wedig et al.
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Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
Tohru Tsuruoka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Sergiu Clima et al.
JOURNAL OF APPLIED PHYSICS (2016)
Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices
Wonjoo Kim et al.
NANOSCALE (2016)
Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
Seungho Cho et al.
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Christoph Baeumer et al.
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Sapan Agarwal et al.
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Mohamed M. Sabry Aly et al.
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Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
Geoffrey W. Burr et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
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Spectromicroscopic insights for rational design of redox-based memristive devices
Christoph Baeumer et al.
NATURE COMMUNICATIONS (2015)
In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2
Ranga J. Kamaladasa et al.
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Maheshwar Pd Sah et al.
IEEE CIRCUITS AND SYSTEMS MAGAZINE (2014)
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies
Shahar Kvatinsky et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2014)
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yuchao Yang et al.
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Access devices for 3D crosspoint memory
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
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Yang Yin Chen et al.
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Matthew D. Pickett et al.
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Pattern classification by memristive crossbar circuits using ex situ and in situ training
Fabien Alibart et al.
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E. Linn et al.
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Stephan Menzel et al.
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Feng Miao et al.
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Antonio C. Torrezan et al.
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Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno et al.
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
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Neuromorphic silicon neuron circuits
Giacomo Indiveri et al.
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Sung Hyun Jo et al.
NANO LETTERS (2010)
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Julien Borghetti et al.
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Rainer Waser et al.
ADVANCED MATERIALS (2009)
The missing memristor found
Dmitri B. Strukov et al.
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Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
K Szot et al.
NATURE MATERIALS (2006)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)