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Thomas Heisig et al.
ADVANCED MATERIALS (2018)
Equivalent-accuracy accelerated neural-network training using analogue memory
Stefano Ambrogio et al.
NATURE (2018)
Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films
Anna Palau et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
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Ilia Valov et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Capacitive neural network with neuro-transistors
Zhongrui Wang et al.
NATURE COMMUNICATIONS (2018)
Biological plausibility and stochasticity in scalable VO2 active memristor neurons
Wei Yi et al.
NATURE COMMUNICATIONS (2018)
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Daniele Ielmini et al.
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Hussein Nili et al.
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Mixed-precision in-memory computing
Manuel Le Gallo et al.
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Yuanyuan Shi et al.
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Can Li et al.
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Zhongrui Wang et al.
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Optimization of RRAM-Based Physical Unclonable Function With a Novel Differential Read-Out Method
Yachuan Pang et al.
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Multibit memory operation of metal-oxide bi-layer memristors
Spyros Stathopoulos et al.
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Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films
Amit Khare et al.
ADVANCED MATERIALS (2017)
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Sankaramangalam Ulhas Sharath et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
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David Cooper et al.
ADVANCED MATERIALS (2017)
Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories
Hongchu Du et al.
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Anja Wedig et al.
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Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
Tohru Tsuruoka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Sergiu Clima et al.
JOURNAL OF APPLIED PHYSICS (2016)
Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices
Wonjoo Kim et al.
NANOSCALE (2016)
Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
Seungho Cho et al.
NATURE COMMUNICATIONS (2016)
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
Christoph Baeumer et al.
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Sapan Agarwal et al.
FRONTIERS IN NEUROSCIENCE (2016)
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Mohamed M. Sabry Aly et al.
COMPUTER (2015)
Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
Geoffrey W. Burr et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Spectromicroscopic insights for rational design of redox-based memristive devices
Christoph Baeumer et al.
NATURE COMMUNICATIONS (2015)
In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2
Ranga J. Kamaladasa et al.
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Maheshwar Pd Sah et al.
IEEE CIRCUITS AND SYSTEMS MAGAZINE (2014)
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies
Shahar Kvatinsky et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2014)
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yuchao Yang et al.
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Access devices for 3D crosspoint memory
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM
Yang Yin Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
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A scalable neuristor built with Mott memristors
Matthew D. Pickett et al.
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Pattern classification by memristive crossbar circuits using ex situ and in situ training
Fabien Alibart et al.
NATURE COMMUNICATIONS (2013)
Beyond von Neumann-logic operations in passive crossbar arrays alongside memory operations
E. Linn et al.
NANOTECHNOLOGY (2012)
Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
Stephan Menzel et al.
ADVANCED FUNCTIONAL MATERIALS (2011)
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Feng Miao et al.
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Sub-nanosecond switching of a tantalum oxide memristor
Antonio C. Torrezan et al.
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Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno et al.
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
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Neuromorphic silicon neuron circuits
Giacomo Indiveri et al.
FRONTIERS IN NEUROSCIENCE (2011)
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Sung Hyun Jo et al.
NANO LETTERS (2010)
'Memristive' switches enable 'stateful' logic operations via material implication
Julien Borghetti et al.
NATURE (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
K Szot et al.
NATURE MATERIALS (2006)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)
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