4.8 Article

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

期刊

ADVANCED SCIENCE
卷 7, 期 1, 页码 -

出版社

WILEY
DOI: 10.1002/advs.201901606

关键词

ABO(3) perovskite oxides; ferromagnetic insulators; interface engineering; manganite thin films; octahedral proximity effect

资金

  1. EPSRC [EP/L011700/1, EP/N004272/1]
  2. Isaac Newton Trust [Minute 13.38(k)]
  3. China Scholarship Council
  4. Cambridge Commonwealth, European and International Trust
  5. Thousand Youth Talents Program of China
  6. Cardiff University
  7. Materials Science and Engineering Division of the U.S. DOE Office of Science, Basic Energy Sciences
  8. Diamond Light Source [SI17284]
  9. U.S. DOE's National Nuclear Security Administration [DE-NA0003525]
  10. U.S. National Science Foundation [DMR-1809520]
  11. NNSA's Laboratory Directed Research and Development Program
  12. U.S DOE's NNSA [89233218CNA000001]
  13. EPSRC [EP/N004272/1, EP/P007767/1, EP/L011700/1, EP/P027032/1] Funding Source: UKRI

向作者/读者索取更多资源

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn e(g) bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

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