期刊
NANOMATERIALS
卷 9, 期 10, 页码 -出版社
MDPI
DOI: 10.3390/nano9101456
关键词
two-dimensional molybdenum disulfide; direct growth; flexible Yttria-stabilized zirconia substrate
类别
资金
- ENrG Inc.
- Center of Excellence in Materials Informatics (CMI)
- Korean-American Scientist and Engineer Association
In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-mu m-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 degrees C showed a uniform crystal size of approximately 50 mu m, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2. Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据