4.6 Article

Efficient and Stable Solution-Processed Organic Light-Emitting Transistors Using a High-k Dielectric

期刊

ACS PHOTONICS
卷 6, 期 12, 页码 3159-3165

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.9b01265

关键词

organic light-emitting transistors; high-k dielectric; polyvinylidene fluoride copolymer

资金

  1. University of Oxford
  2. Durham University
  3. European Union [658563]
  4. King Abdullah University of Science and Technology (KAUST)
  5. Marie Curie Actions (MSCA) [658563] Funding Source: Marie Curie Actions (MSCA)

向作者/读者索取更多资源

We report the development of highly efficient and stable solution-processed organic light-emitting transistors (OLETs) that combine a polymer heterostructure with the transparent high-k dielectric poly(vinylidenefluoride(0.62)-trifluoroethylene(0.31)-chlorotrifluoroethylene(0.7)) (P(VDF-TrFE-CTFE)). The polymer heterostructure comprises of poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']-dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT) and Super Yellow as charge-transporting and light-emitting layers, respectively. Device characterization shows that the use of P(VDF-TrFE-CTFE) leads to larger channel currents (approximate to 2 mA) and lower operating voltages (-35 V) than for previously reported polymer based OLETs. Furthermore, the combined transparency of the dielectric and gate electrode, results in efficient bottom emission with external quantum efficiency of approximate to 0.88% at a luminance L >= 2000 cd m(-2). Importantly, the resulting OLETs exhibit excellent shelf life and operational stability. The present work represents a significant step forward in the pursuit of all-solution-processed OLET technology for lighting and display applications.

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