4.5 Article

Epitaxial Lift Off of II-VI Thin Films Using Water-Soluble MgTe

期刊

IEEE JOURNAL OF PHOTOVOLTAICS
卷 9, 期 6, 页码 1834-1838

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2019.2928469

关键词

Cadmium compounds; epitaxial layers; flexible electronics; luminescence; optical microscopy; thin films; x-ray diffraction (XRD); II-VI semiconductor materials

资金

  1. Department of Energy through Bay Area Photovoltaic Consortium [DE-EE0004946]
  2. Energy Efficiency and Renewable Energy [DE-EE0007552]
  3. Air Force Office of Scientific Research [FA9550-15-1-0196]
  4. National Science Foundation [NNCI-ECCS1542160]

向作者/读者索取更多资源

This paper reports an epitaxial lift-off (ELO) method that uses water-soluble MgTe to obtain free-standing single-crystal CdTe/MgCdTe double-heterostructure (DH) thin films from samples grown monolithically on lattice-matched InSb substrates. Photoluminescence measurements on as-grown and free-standing films reveal that the optical quality of the DH survives ELO. This method potentially enables substantial increases in the conversion efficiencies of thin-film solar cells through enhancement of the photon-recycling effect. This process holds promise in multijunction PV applications that considers the integration of a 1.7-eV MgCdTe top cell and a crystalline Si bottom cell to form a tandem device with efficiency potentially higher than 30%. Additionally, the method can be applied to other families of devices, such as infrared photodetectors.

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